MT29F32G08FAAWP Datasheet | Micron Technology

Features NAND Flash Memory MT29F8G08AAAWP, MT29F16G08DAAWP, MT29F32G08FAAWP, MT29F8G08AAAC4, MT29F16G08EAAC4, MT29F32G08GAAC4, MT29F8G08AAAC6, MT29F16G08EAAC6, MT29F32G08GAAC6, MT29F64G08KAAC6 Features - Open NAND Flash Interface (ONFI) 1.0 pliant - Single-level cell (SLC) technology - Organization - Page size: x8: 4,314 bytes (4,096 + 218 bytes) - Block size: 64 pages (256K + 13K bytes) - Plane size: 2,048 blocks - Device size: 8Gb: 4,096 blocks; 16Gb: 8,192 blocks; 32Gb: 16,384 blocks; 64Gb: 32,768 blocks - READ performance - Random READ: 25µs - Sequential READ: 20ns - WRITE performance - PROGRAM PAGE: 250µs (TYP) - BLOCK ERASE: 1.5ms (TYP) - Endurance - 100,000 PROGRAM/ERASE cycles (1-bit ECC1) - Data retention: 10 years - First block (block address 00h) guaranteed to be valid when shipped from factory1 - Industry-standard basic NAND Flash mand set - Advanced mand set - PROGRAM PAGE CACHE MODE - PAGE READ CACHE MODE - One-time programmable (OTP) mands - Two-plane mands - Interleaved die operations - READ UNIQUE ID (contact factory) - Operation status byte provides a software method of detecting: - Operation pletion - Pass/fail condition - Write-protect status - Ready/busy# (R/B#) signal provides a hardware method of detecting PROGRAM or ERASE cycle pletion - WP# signal: entire device hardware write protect - RESET required after power-up - INTERNAL DATA MOVE operations supported within the plane from which data is read Figure 1: 48-Pin TSOP Type 1 Options - Density2 - 8Gb, 16Gb, 32Gb, 64Gb - Device width:...