MT29F4G16ABAEAH4
Key Features
- NAND Flash Memory
- Open NAND Flash Interface (ONFI) 1.0-pliant1
- Single-level cell (SLC) technology
- Asynchronous I/O performance – tRC/tWC: 20ns (3.3V), 30ns (1.8V)
- Array performance – Read page: 25µs – Program page: 200µs (TYP) – Erase block: 2ms (TYP)
- mand set: ONFI NAND Flash Protocol
- Operation status byte provides software method for detecting – Operation pletion – Pass/fail condition – Write-protect status
- Ready/Busy# (R/B#) signal provides a hardware method of detecting operation pletion
- WP# signal: Write protect entire device
- First block (block address 00h) is valid when shipped from factory with ECC. For minimum required ECC, see Error Management
