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MT29F64G08CECCB

Manufacturer: Micron Technology

This datasheet includes multiple variants, all published together in a single manufacturer document.

MT29F64G08CECCB datasheet preview

Datasheet Details

Part number MT29F64G08CECCB
Datasheet MT29F64G08CECCB MT29F32G08CBACA Datasheet (PDF)
File Size 3.14 MB
Manufacturer Micron Technology
Description NAND Flash Memory
MT29F64G08CECCB page 2 MT29F64G08CECCB page 3

MT29F64G08CECCB Overview

New Product VTS40100CT, VF40100C, VB40100C & VI40100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.375 V at IF = 5 A TMBS ® TO-220AB ITO-220AB.

MT29F64G08CECCB Key Features

  • Trench MOS Schottky technology
  • Low forward voltage drop, low power losses
  • High efficiency operation
  • Low thermal resistance
  • Meets MSL level 1, per J-STD-020C, LF max peak of 245 °C (for TO-263AB package)
  • Solder dip 260 °C, 40 seconds (for TO-220AB, ITO-220AB & TO-262AA package)
  • ponent in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Micron Technology logo - Manufacturer

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