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Micron

MT36LSDT12872 Datasheet Preview

MT36LSDT12872 Datasheet

1GB Synchronous DRAM Module

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1GB, 2GB: (x72, ECC, DR) 168-Pin SDRAM RDIMM
Features
Synchronous DRAM Module
MT36LSDT12872 – 1GB
MT36LSDT25672 – 2GB
For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/modules
Features
• 168-pin, dual in-line memory module (DIMM)
• PC100- and PC133-compliant
• Registered inputs with one-clock delay
• Phase-lock loop (PLL) clock driver to reduce loading
• Utilizes 125 MHz and 133 MHz SDRAM
components
• Supports ECC error detection and correction
• 1GB (128 Meg x 72) and 2GB (256 Meg x 72)
• Single +3.3V power supply
• Fully synchronous; all signals registered on positive
edge of PLL clock
• Internal pipelined operation; column address can
be changed every clock cycle
• Internal SDRAM banks for hiding row access/
precharge
• Programmable burst lengths: 1, 2, 4, 8, or full page
• Auto precharge, includes concurrent auto precharge
• Auto refresh mode
• Self refresh mode: 64ms, 4,096-cycle refresh
• LVTTL-compatible inputs and outputs
• Serial presence-detect (SPD)
• Gold edge contacts
Table 1:
Timing Parameters
CL = CAS (READ) latency
Module
Marking
-13E
-133
Clock
133 MHz
133 MHz
Access Time
CL = 2
5.4ns
CL = 3
5.4ns
Setup
Time
1.5
1.5
Hold
Time
0.8
0.8
Figure 1: 168-Pin DIMM (MO-161)
Standard 1.70in. (43.18mm)
Low-Profile 1.20in. (30.48mm)
Options
• Package
168-pin DIMM (standard)
168-pin DIMM (lead-free)
• Frequency/CAS Latency2
133 MHz/CL = 2
133 MHz/CL = 3
• PCB
Standard 1.70in (43.18mm)
Low-Profile 1.20in. (30.48mm)
Marking
G
Y1
-13E
-133
See note on page 2
See note on page 2
Notes: 1. Contact Micron for product availability.
2. Registered mode adds one clock cycle to CL.
Table 2: Address Table
Parameter
Refresh Count
Device Banks
Device Configuration
Row Addressing
Column Addressing
Module Ranks
1GB
8K
4 (BA0, BA1)
256Mb (64 Meg x 4)
8K (A0–A12)
2K (A0–A9, A11)
2 (S0#, S2#; S1#, S3#)
2GB
8K
4 (BA0, BA1)
512Mb (128 Meg x 4)
8K (A0–A12)
4K (A0–A9, A11, A12)
2 (S0#, S2#; S1#, S3#)
PDF: 09005aef80b1835d/Source: 09005aef80b18348
SD36C128_256x72G.fm - Rev. E 6/05 EN
1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.




Micron

MT36LSDT12872 Datasheet Preview

MT36LSDT12872 Datasheet

1GB Synchronous DRAM Module

No Preview Available !

1GB, 2GB: (x72, ECC, DR) 168-Pin SDRAM RDIMM
Features
Table 3: Part Numbers
Part Number
MT36LSDT12872G-13E__
MT36LSDT12872Y-13E__
MT36LSDT12872G-133__
MT36LSDT12872Y-133__
MT36LSDT25672G-13E__
MT36LSDT25672Y-13E__
MT36LSDT25672G-133__
MT36LSDT25672Y-133__
Note:
Module Density
Configuration
System Bus Speed
1GB
128 Meg x 72
133 MHz
1GB
128 Meg x 72
133 MHz
1GB
128 Meg x 72
133 MHz
1GB
128 Meg x 72
133 MHz
2GB
256 Meg x 72
133 MHz
2GB
256 Meg x 72
133 MHz
2GB
256 Meg x 72
133 MHz
2GB
256 Meg x 72
133 MHz
The designators for component and PCB revision are the last two characters of each part
number. Consult factory for current revision codes. Example: MT36LSDT12872G-133B1.
PDF: 09005aef80b1835d/Source: 09005aef80b18348
SD36C128_256x72G.fm - Rev. E 6/05 EN
2 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002 Micron Technology, Inc. All rights reserved.


Part Number MT36LSDT12872
Description 1GB Synchronous DRAM Module
Maker Micron
Total Page 30 Pages
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