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Micron

MT4HTF12864HZ Datasheet Preview

MT4HTF12864HZ Datasheet

1GB DDR2 SDRAM SODIMM

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256MB, 512MB, 1GB (x64, SR) 200-Pin DDR2 SODIMM
Features
DDR2 SDRAM SODIMM
MT4HTF3264HZ – 256MB
MT4HTF6464HZ – 512MB
MT4HTF12864HZ – 1GB
Features
• 200-pin, small-outline dual in-line memory module
(SODIMM)
• Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
• 256MB (32 Meg x 64), 512MB (64 Meg x 64), 1GB
(128 Meg x 64)
• VDD = VDDQ = 1.8V
• VDDSPD = 1.7–3.6V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent opera-
tion
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Halogen-free
• Serial presence detect (SPD) with EEPROM
• Gold edge contacts
• Single rank
Figure 1: 200-Pin SODIMM (MO-224 R/C C)
Module height: 30mm (1.181in)
Options
• Operating temperature
– Commercial (0°C TA +70°C)
– Industrial (–40°C TA +85°C)1
• Package
– 200-pin DIMM (halogen-free)
• Frequency/CL2
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
Marking
None
I
Z
-80E
-800
-667
Notes: 1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency.
Table 1: Key Timing Parameters
Speed
Grade
-80E
-800
-667
-53E
-40E
Industry
Nomenclature
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
CL = 6
800
800
Data Rate (MT/s)
CL = 5
CL = 4
800 533
667 533
667 553
– 553
– 400
CL = 3
400
400
400
400
400
tRCD
(ns)
12.5
15
15
15
15
tRP
(ns)
12.5
15
15
15
15
tRC
(ns)
55
55
55
55
55
PDF: 09005aef83c05a5d
htf4c32_64_128x64hz.pdf - Rev. D 4/14 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.




Micron

MT4HTF12864HZ Datasheet Preview

MT4HTF12864HZ Datasheet

1GB DDR2 SDRAM SODIMM

No Preview Available !

256MB, 512MB, 1GB (x64, SR) 200-Pin DDR2 SODIMM
Features
Table 2: Addressing
Parameter
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
256MB
8K
8K A[12:0]
4 BA[1:0]
512Mb (32 Meg x 16)
1K A[9:0]
1 S0#
512MB
8K
8K A[12:0]
8 BA[2:0]
1Gb (64 Meg x 16)
1K A[9:0]
1 S0#
1GB
8K
16K A[13:0]
8 BA[2:0]
2Gb (128 Meg x16)
1K A[9:0]
1 S0#
Table 3: Part Numbers and Timing Parameters – 256MB
Base device: MT47H32M16,1 512Mb DDR2 SDRAM
Part Number2
Module
Density
Configuration
MT4HTF3264H(I)Z-80E__
256MB
32 Meg x 64
MT4HTF3264H(I)Z-800__
256MB
32 Meg x 64
MT4HTF3264H(I)Z-667__
256MB
32 Meg x 64
Module
Bandwidth
6.4 GB/s
6.4 GB/s
5.3 GB/s
Memory Clock/
Data Rate
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
Clock Cycles
(CL-tRCD-tRP)
5-5-5
6-6-6
5-5-5
Table 4: Part Numbers and Timing Parameters – 512MB
Base device: MT47H64M16,1 1Gb DDR2 SDRAM
Part Number2
Module
Density
Configuration
MT4HTF6464H(I)Z-80E__
512MB
64 Meg x 64
MT4HTF6464H(I)Z-800__
512MB
64 Meg x 64
MT4HTF6464H(I)Z-667__
512MB
64 Meg x 64
Module
Bandwidth
6.4 GB/s
6.4 GB/s
5.3 GB/s
Memory Clock/
Data Rate
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
Clock Cycles
(CL-tRCD-tRP)
5-5-5
6-6-6
5-5-5
Table 5: Part Numbers and Timing Parameters – 1GB Modules
Base device: MT47H128M16,1 2Gb DDR2 SDRAM
Part Number2
Module
Density
Configuration
MT4HTF12864H(I)Z-80E__ 1GB 128 Meg x 64
MT4HTF12864H(I)Z-800__ 1GB 128 Meg x 64
MT4HTF12864H(I)Z-667__ 1GB 128 Meg x 64
Module
Bandwidth
6.4 GB/s
6.4 GB/s
5.3 GB/s
Memory Clock/
Data Rate
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
Clock Cycles
(CL-tRCD-tRP)
5-5-5
6-6-6
5-5-5
Notes: 1. The data sheet for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MT4HTF6464HZ-667M1.
PDF: 09005aef83c05a5d
htf4c32_64_128x64hz.pdf - Rev. D 4/14 EN
2 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.


Part Number MT4HTF12864HZ
Description 1GB DDR2 SDRAM SODIMM
Maker Micron
Total Page 17 Pages
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