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MT5LC512K8D4 - 512K x 8 SRAM

Key Features

  • All I/O pins are 5V tolerant.
  • High speed: 12, 15, 20, 25 and 35ns.
  • High-performance, low-power, CMOS double-metal process.
  • Multiple center power and ground pins for improved noise immunity.
  • Single +3.3V ±0.3V power sup£!y _.
  • Easy memory expansion with CE and DE options.
  • All ~ts and outputs are TIL-compatible.
  • Fast OE access time: 6, 8, 10, 12 and 15ns.
  • Complies to JEDEC low-voltage TIL standards.

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Full PDF Text Transcription (Reference)

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IVIIC:I=ION 1-·, ADVANCE MT5LC512K8D4 REVOLUTIONARY PINOUT 512K x 8 SRAM SRAM FEATURES • All I/O pins are 5V tolerant • High speed: 12, 15, 20, 25 and 35ns • High-performance, low-power, CMOS double-metal process • Multiple center power and ground pins for improved noise immunity • Single +3.3V ±0.