256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
Features
DDR2 SDRAM SODIMM
MT8HTF3264HDY – 256MB
MT8HTF6464HDY – 512MB
MT8HTF12864HDY – 1GB
Features
• 200-pin, small-outline dual in-line memory module
(SODIMM)
• Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
• 256MB (32 Meg x 64), 512MB (64 Meg x 64), or 1GB
(128 Meg x 64)
• VDD = 1.8V
• VDDSPD = 1.7–3.6V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent opera-
tion
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Serial presence detect (SPD) with EEPROM
• Gold edge contacts
• Dual rank
Figure 1: 200-Pin SODIMM (MO-224 R/C A)
Module height: 30mm (1.18in)
Options
• Operating temperature
– Commercial (0°C ≤ TA ≤ +70°C)
– Industrial (–40°C ≤ TA ≤ +85°C)1
• Package
– 200-pin DIMM (lead-free)
• Frequency/CL2
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-553)3
– 5.0ns @ CL = 3 (DDR2-400)3
Marking
D
T
Y
-80E
-800
-667
-53E
-40E
Notes:
1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency.
3. Not recommended for new designs.
Table 1: Key Timing Parameters
Speed
Grade
-80E
-800
-667
-53E
-40E
Industry
Nomenclature
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
CL = 6
800
800
–
–
–
Data Rate (MT/s)
CL = 5
CL = 4
800 533
667 533
667 553
– 553
– 400
CL = 3
400
400
400
400
400
tRCD
(ns)
12.5
15
15
15
15
tRP
(ns)
12.5
15
15
15
15
tRC
(ns)
55
55
55
55
55
PDF: 09005aef80ebed66
htf8c32_64_128x64hd.pdf - Rev. E 3/10 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2006 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
