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NP8P128AE3T1760E - P8P Parallel Phase Change Memory

This page provides the datasheet information for the NP8P128AE3T1760E, a member of the NP8P128A13BSM60E P8P Parallel Phase Change Memory family.

Description

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Features

  • P8P Parallel Phase Change Memory (PCM) Features.
  • High-performance READ.
  • 115ns initial READ access.
  • 135ns initial READ access.
  • 25ns, 8-word asynchronous-page READ.
  • Architecture.
  • Asymmetrically blocked architecture.
  • Four 32KB parameter blocks with top or bottom configuration.
  • 128KB main blocks.
  • Serial peripheral interface (SPI) to enable lower pin count on-board programming.
  • Phase change memory (PCM).

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Datasheet preview – NP8P128AE3T1760E

Datasheet Details

Part number NP8P128AE3T1760E
Manufacturer Micron
File Size 2.57 MB
Description P8P Parallel Phase Change Memory
Datasheet download datasheet NP8P128AE3T1760E Datasheet
Additional preview pages of the NP8P128AE3T1760E datasheet.

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Full PDF Text Transcription

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128Mb: P8P Parallel PCM Features P8P Parallel Phase Change Memory (PCM) Features • High-performance READ – 115ns initial READ access – 135ns initial READ access – 25ns, 8-word asynchronous-page READ • Architecture – Asymmetrically blocked architecture – Four 32KB parameter blocks with top or bottom configuration – 128KB main blocks – Serial peripheral interface (SPI) to enable lower pin count on-board programming • Phase change memory (PCM) – Chalcogenide phase change storage element – Bit-alterable WRITE operation • Voltage and power – VCC (core) voltage: 2.7–3.6V – VCCQ (I/O) voltage: 1.7–3.
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