MT58L256L36D Datasheet PDF ((MT58Lxxxx) 8Mb SYNCBURST SRAM) | Download Micron Semiconductor MT58L256L36D

MT58L256L36D - (MT58Lxxxx) 8Mb SYNCBURST SRAM

This page provides the datasheet information for the MT58L256L36D, a member of the MT58L512L18D (MT58Lxxxx) 8Mb SYNCBURST SRAM family.

Description

The Micron® SyncBurst™ SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process.

Micron’s 8Mb SyncBurst SRAMs integrate a 512K x 18, 256K x 32, or 256K x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter.

Features

w w w.
ta Fast clock and OE# access times Single +3.3V +0.3V/-0.165V power supply (VDD) Separate +3.3V isolated output buffer supply (VDDQ) SNOOZE MODE for reduced-power standby Common data inputs and data outputs Individual BYTE WRITE control and GLOBAL WRITE Three chip enables for simple depth expansion and address pipelining Clock-controlled an.

Datasheet Details

Part number	MT58L256L36D
Manufacturer	Micron Semiconductor
File Size	442.47 KB
Description	(MT58Lxxxx) 8Mb SYNCBURST SRAM
Datasheet	MT58L256L36D Datasheet
Additional preview pages of the MT58L256L36D datasheet.

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Full PDF Text Transcription

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™ t e 8Mb SYNCBURST e h SRAMS 4U . m o c 8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM MT58L512L18D, MT58L256L32D, MT58L256L36D 3.3V VDD, 3.3V I/O, Pipelined, DoubleCycle Deselect a D . FEATURES w w w • • • • • • • • • • • • • • • ta Fast clock and OE# access times Single +3.3V +0.3V/-0.165V power supply (VDD) Separate +3.

Published: Jan 4, 2006 |