mt46v32m16.
* VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V
* Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data www.DataSheet4U.com captu.
The 512Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quadbank DRAM. The 512Mb DDR SDRAM uses a double data rate architecture to achieve high-speed operation. The double d.
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