MT28F1284W18 Overview
8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY.
MT28F1284W18 Key Features
- 135 individually programmable/erasable blocks
- 16 partitions (8Mb each for code and data storage) Operating Voltage
- VCC = 1.70V (MIN)-1.95V (MAX)
- VCCQ = 1.70V (MIN)-2.24V (MAX) VPP = 1.8V (TYP) for in-system PROGRAM/ERASE
- 12V ±5% (HV) VPP tolerant (factory programming patibility) Random access time: 60ns @ 1.70V VCC Burst mode read access
- MAX clock rate: 66 MHz (tCLK = 15ns)
- MAX clock rate: 54 MHz (tCLK = 18.5ns)
- Burst latency 60ns @1.70V VCC and 66 MHz
- 4 word, 8 word, 16 word, and continuous burst modes
- tACLK: 14ns @ 1.70V VCC and 54 MHz