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MT28FW01GABA1HJS-0AAT - Parallel NOR Flash Automotive Memory

This page provides the datasheet information for the MT28FW01GABA1HJS-0AAT, a member of the MT28FW01GABA1HPC-0AAT Parallel NOR Flash Automotive Memory family.

Features

  • Parallel NOR Flash Automotive Memory MT28FW01GABA1xPC-0AAT, MT28FW01GABA1xJS-0AAT Features.
  • Single-level cell (SLC) process technology.
  • Supply voltage.
  • VCC = 2.7.
  • 3.6V (program, erase, read).
  • VCCQ = 1.65 - VCC (I/O buffers).
  • Asynchronous random/page read.
  • Page size: 16 words.
  • Page access: 20ns (VCC = VCCQ = 2.7-3.6V).
  • Random access: 105ns (VCC = VCCQ = 2.7-3.6V).
  • Random access: 110ns (VCCQ = 1.65-VCC).

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Datasheet Details

Part number MT28FW01GABA1HJS-0AAT
Manufacturer Micron Technology
File Size 906.51 KB
Description Parallel NOR Flash Automotive Memory
Datasheet download datasheet MT28FW01GABA1HJS-0AAT Datasheet
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1Gb: x16, 3V, MT28FW, Automotive Parallel NOR Features Parallel NOR Flash Automotive Memory MT28FW01GABA1xPC-0AAT, MT28FW01GABA1xJS-0AAT Features • Single-level cell (SLC) process technology • Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65 - VCC (I/O buffers) • Asynchronous random/page read – Page size: 16 words – Page access: 20ns (VCC = VCCQ = 2.7-3.6V) – Random access: 105ns (VCC = VCCQ = 2.7-3.6V) – Random access: 110ns (VCCQ = 1.65-VCC) • Buffer program (512-word program buffer) – 2.0 MB/s (TYP) when using full buffer program – 2.5 MB/s (TYP) when using accelerated buffer program (VHH) • Word program: 25us per word (TYP) • Block erase (128KB): 0.
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