MT42L128M32D1 Datasheet | Micron Technology

4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4, MT42L384M32D3 Features - Ultra low-voltage core and I/O power supplies - VDD2 = 1.14- 1.30V - VDDCA/VDDQ = 1.14- 1.30V - VDD1 = 1.70- 1.95V - Clock frequency range - 533- 10 MHz (data rate range: 1066- 20 Mb/s/pin) - Four-bit prefetch DDR architecture - Eight internal banks for concurrent operation - Multiplexed, double data rate, mand/address inputs; mands entered on every CK edge - Bidirectional/differential data strobe per byte of data (DQS/DQS#) - Programmable READ and WRITE latencies (RL/WL) - Programmable burst lengths: 4, 8, or 16 - Per-bank refresh for concurrent operation - On-chip temperature sensor to control self refresh rate - Partial-array self refresh (PASR) - Deep power-down mode (DPD) - Selectable output drive strength (DS) - Clock stop capability -...