MT46H4M32LF - Mobile Low-Power DDR SDRAM

Micron Technology

MT46H4M32LF Datasheet Preview — Preview of MT46H4M32LF PDF

Datasheet Details

Part number	MT46H4M32LF
Manufacturer	Micron Technology
File Size	3.12 MB
Description	Mobile Low-Power DDR SDRAM
Datasheet	MT46H4M32LF-MicronTechnology.pdf

MT46H4M32LF Product details

Description

8 Functional Block Diagrams 9 Ball Assignments 11 Ball Descriptions 13 Package Dimensions 15 Electrical Specifications 17 Electrical Specifications IDD Parameters 20 Electrical Specifications AC Operating Conditions 24 Output Drive Characteristics 29 Functional Description 32 Commands 33 DESELECT 34 NO OPERATION 34 LOAD MODE REGISTER 34 ACTIVE 34 READ 35 WRITE 36 PRECHARGE 37 BURST TERMINATE 38 AUTO REFRESH 38 SELF REFRESH 39 DEEP POWER-DOWN 39 Truth Tab

Features

Mobile Low-Power DDR SDRAM MT46H8M16LF.
2 Meg x 16 x 4 Banks MT46H4M32LF.
1 Meg x 32 x 4 Banks Features.
VDD/VDDQ = 1.70.
1.95V.
Bidirectional data strobe per byte of data (DQS).
Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle.
Differential clock inputs (CK and CK#).
Commands entered on each positive CK edge.
DQS edge-aligned with data for READs; centeraligned with data for.

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Published: Oct 11, 2014 |