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MT46H8M32LG - Mobile DDR SDRAM

General Description

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Key Features

  • Mobile DDR SDRAM MT46H16M16LF.
  • 4 Meg x 16 x 4 banks MT46H8M32LF/LG.
  • 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www. micron. com Features.
  • Endur-IC™ technology VDD/VDDQ = 1.70.
  • 1.95V Bidirectional data strobe per byte of data (DQS) Internal, pipelined do.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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256Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H16M16LF – 4 Meg x 16 x 4 banks MT46H8M32LF/LG – 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com Features • • • • • • • • • • • • • • • • • • • Endur-IC™ technology VDD/VDDQ = 1.70–1.