MT48H4M32LF Description
8 Meg x 16, 4 Meg x 32 Mobile SDRAM.
MT48H4M32LF Key Features
- 2 Meg x 16 x 4 banks MT48H4M32LF
- 1 Meg x 32 x 4 banks Features
- VDD/VDDQ = 1.7-1.95V
- Fully synchronous; all signals registered on positive edge of system clock
- Internal, pipelined operation; column address can be changed every clock cycle
- 4 internal banks for concurrent operation
- Programmable burst lengths (BL): 1, 2, 4, 8, and continuous
- Auto precharge, includes concurrent auto precharge
- Auto refresh and self refresh modes
- LVTTL-patible inputs and outputs