Datasheet4U Logo Datasheet4U.com

MT48H4M32LF - Mobile Low-Power SDR SDRAM

General Description

8 Functional Block Diagram 9 Ball Assignments and Descriptions 10 Package Dimensions 13 Electrical Specifications 15 Absolute Maximum Ratings 15 Electrical Specifications IDD Parameters 17 Electrical Specifications AC Operating Conditions 20 Output Drive Characteristics

Key Features

  • Mobile Low-Power SDR SDRAM MT48H8M16LF.
  • 2 Meg x 16 x 4 banks MT48H4M32LF.
  • 1 Meg x 32 x 4 banks Features.
  • VDD/VDDQ = 1.7.
  • 1.95V.
  • Fully synchronous; all signals registered on positive edge of system clock.
  • Internal, pipelined operation; column address can be changed every clock cycle.
  • 4 internal banks for concurrent operation.
  • Programmable burst lengths (BL): 1, 2, 4, 8, and continuous.
  • Auto precharge, includes concurr.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MT4832 30V 10A Dual N-Channel MOSFET MT Semiconductor
MT48LC1M16A1 SYNCHRONOUS DRAM Micron
MT48LC2M32B2 SDR SDRAM MICRON
MT48LC2M8A SYNCHRONOUS DRAM MICRON
MT4067-P 256K x 1 DRAM Micron

Other Datasheets by Micron Technology

Part Number Description
MT48H4M16LF Mobile SDRAM
MT48H16M16LF (MT48H16M16LF / MT48H16M32LF) 16 Meg x 32 Mobile SDRAM
MT48H16M16LFBG 256M x 16 Mobile SDRAM
MT48H16M16LFFG 256M x 16 Mobile SDRAM
MT48H16M32LF Mobile LPSDR SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H8M16LF – 2 Meg x 16 x 4 banks MT48H4M32LF – 1 Meg x 32 x 4 banks Features • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive edge of system clock • Internal, pipelined operation; column address can be changed every clock cycle • 4 internal banks for concurrent operation • Programmable burst lengths (BL): 1, 2, 4, 8, and continuous • Auto precharge, includes concurrent auto precharge • Auto refresh and self refresh modes • LVTTL-compatible inputs and outputs • On-chip temperature sensor to control self refresh rate • Partial-array self refresh (PASR) • Deep power-down (DPD) • Selectable output drive strength (DS) • 64ms refresh period Options • VDD/VDDQ: 1.8V/1.