MT4C4M4E8, MT4LC4M4E9 Datasheet - Micron Technology

MT4C4M4E8 4 MEG x 4 EDO DRAM

The 4 Meg x 4 DRAM is a randomly accessed, solid-state memory containing 16,777,216 bits organized in a x4 configuration. RAS# is used to latch the row address (first 11 bits for 2K and first 12 bits for 4K). Once the page has been opened by RAS#, CAS# is used to latch the column address 84ns 104ns.

MT4C4M4E8 Features

* Industry-standard x4 pinout, timing, functions and packages

* State-of-the-art, high-performance, low-power CMOS silicon-gate process

* Single power supply (+3.3V ±0.3V or +5V ±10%)

* All inputs, outputs and clocks are TTL-compatible

* Refresh modes: RAS#-ON

MT4LC4M4E9_MicronTechnology.pdf

MT4C4M4E8 Datasheet Preview — This datasheet PDF includes multiple part numbers: MT4C4M4E8, MT4LC4M4E9. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MT4C4M4E8, MT4LC4M4E9

Manufacturer:

Micron Technology

File Size:

291.14 KB

Description:

4 meg x 4 edo dram.

Note:

This datasheet PDF includes multiple part numbers: MT4C4M4E8, MT4LC4M4E9.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

MT4C4M4E9 4 MEG x 4 EDO DRAM (Micron Technology)

MT4C4M4Ex DRAM (Micron Technology)

MT4C4M4A1 DRAM (Micron Technology)

MT4C4M4Ax DRAM (Micron Technology)

MT4C4M4B1 DRAM (Micron Technology)

MT4C4M4Bx DRAM (Micron Technology)

MT4C40004 4M x 4 DRAM (Micron Technology)

MT4C40005 4M x 4 DRAM (Micron Technology)

TAGS

MT4C4M4E8 MT4LC4M4E9 MEG EDO DRAM Micron Technology

MT4C4M4E8 Distributor