MT4LC4M16N3, MT4LC4M16R6 Datasheet - Micron Technology

MT4LC4M16N3 DRAM

The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in 4,096 rows by 1,024 co.

MT4LC4M16N3 Features

* Single +3.3V ±0.3V power supply

* Industry-standard x16 pinout, timing, functions, and package

* 12 row, 10 column addresses (R6) 13 row, 9 column addresses (N3)

* High-performance CMOS silicon-gate process

* All inputs, outputs and clocks are LVTTL-compatib

MT4LC4M16R6_MicronTechnology.pdf

MT4LC4M16N3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MT4LC4M16N3, MT4LC4M16R6. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MT4LC4M16N3, MT4LC4M16R6

Manufacturer:

Micron Technology

File Size:

474.53 KB

Description:

Dram.

Note:

This datasheet PDF includes multiple part numbers: MT4LC4M16N3, MT4LC4M16R6.
Please refer to the document for exact specifications by model.

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TAGS

MT4LC4M16N3 MT4LC4M16R6 DRAM Micron Technology

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