MT4LC8M8C2, MT4LC8M8P4 Datasheet - Micron Technology

MT4LC8M8C2 DRAM

The 8 Meg x 8 DRAM is a high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC8M8C2 and MT4LC8M8P4 are functionally organized as 8,388,608 locations containing eight bits each. The 8,388,608 memory locations are arranged in.

MT4LC8M8C2 Features

* Single +3.3V ±0.3V power supply

* Industry-standard x8 pinout, timing, functions, and packages

* 12 row, 11 column addresses (C2) or 13 row, 10 column addresses (P4)

* High-performance CMOS silicon-gate process

* All inputs, outputs and clocks are LVTTLcompa

MT4LC8M8P4_MicronTechnology.pdf

MT4LC8M8C2 Datasheet Preview — This datasheet PDF includes multiple part numbers: MT4LC8M8C2, MT4LC8M8P4. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MT4LC8M8C2, MT4LC8M8P4

Manufacturer:

Micron Technology

File Size:

397.75 KB

Description:

Dram.

Note:

This datasheet PDF includes multiple part numbers: MT4LC8M8C2, MT4LC8M8P4.
Please refer to the document for exact specifications by model.

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MT4LC8M8C2 MT4LC8M8P4 DRAM Micron Technology

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