Datasheet Summary
8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH ZBT SRAM
8Mb ZBT® SRAM
Features
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- - High frequency and 100 percent bus utilization Fast cycle times: 10ns, 11ns and 12ns Single +3.3V ±5% power supply (VDD) Separate +3.3V or +2.5V isolated output buffer supply (VDDQ) Advanced control logic for minimum control signal interface Individual BYTE WRITE controls may be tied LOW Single R/W# (read/write) control pin CKE# pin to enable clock and suspend operations Three chip enables for simple depth expansion Clock-controlled and registered addresses, data I/Os and control signals Internally self-timed, fully coherent WRITE Internally self-timed, registered outputs to...