MT58L1MV18D Description
The Micron® SyncBurst™ SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. Micron’s 16Mb SyncBurst SRAMs integrate a 1 Meg x 18, 512K x 32, or 512K x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. All synchronous inputs pass through registers controlled by a positive-edge-triggered single-clock input (CLK).
MT58L1MV18D Key Features
- Fast clock and OE# access times
- Single +3.3V ±0.165Vor 2.5V ±0.125V power supply (VDD)
- Separate +3.3V or 2.5V isolated output buffer supply (VDDQ)
- SNOOZE MODE for reduced-power standby
- mon data inputs and data outputs
- Individual BYTE WRITE control and GLOBAL WRITE
- Three chip enables for simple depth expansion and address pipelining
- Clock-controlled and registered addresses, data I/Os and control signals
- Internally self-timed WRITE cycle
- Burst control (interleaved or linear burst)