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* High Reliability Base lead provided for conventional transistor biasing Rugged package High gain, high voltage transistor +1kV electrical i.

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* Eliminate ground loops Level shifting Line receiver Switching power supplies Motor contro.

Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed TO-5 metal can. The 4N47A, 4N48A and 4N49A’s can be tested to customer specifications, as well as to MIL-PRF19500 JAN, JAN.

JANS4N47

JANS4N48

JANS4N48A

JANS4N49

JANS4N49A

JANS1N4106UR-1

JANS1N4148-1

JANS1N5711

JANS1N5711-1

JANS1N5712-1

JANS1N6512

JANS1N6513

JANS1N6514