900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




  Microsemi Electronic Components Datasheet  

0150SC-1250M Datasheet

Silicon Carbide SIT

No Preview Available !

0150SC-1250M Rev B
0150SC-1250M
1250Watts, 125 Volts, Class AB
150 to 160 MHz
Silicon Carbide SIT
PRELIMINARY SPECIFICATION
GENERAL DESCRIPTION
The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON
CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of
providing 1250 Watts minimum of RF power from 150 to 160 MHz. The
transistor is designed for use in High Power Amplifiers supporting applications
such as VHF Weather Radar and Long Range Tracking Radar. The device is
the first in a series of High Power Silicon Carbide Transistors from
Microsemi PPG.
CASE OUTLINE
55KT FET
(Common Gate)
See outline drawing
ABSOLUTE MAXIMUM RATINGS
Voltage and Current
Drain-Source (VDSS)
Gate-Source (VGS)
Drain Current (Idg)
Temperatures
Storage Temperature
Operating Junction Temperature
250 V
- 1V
35A
-65 to +150°C
+250°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
MIN TYP MAX UNITS
Idss1
Drain-Source Leakage Current VGS = -15V, VDG = 95V
Igss
Gate-Source Leakage Current VGS = -20V, VDS = 0V
θJC1
Thermal Resistance
Pout=1250W
750 µA
50
µA
0.15 ºC/W
FUNCTIONAL CHARACTERISTICS @ 25°C, Vdd = 125V, Idq(avg) = 500 mA, Freq = 155 MHz,
GPG
Pin
ηd
ψ
Po +1dB
Common Gate Power Gain
Input Power
Drain Efficiency
Load Mismatch
Power Output – Higher Drive
Pout = 1250 W, Pulsed
Pulse Width = 300us, DF = 10%
F = 155 MHz, Pout =1250W
F = 155 MHz, Pout = 1250W
F = 155 MHz, Pin = 190 W
9.0 9.5
150 160
60
10:1
1400
Vsg
Source-Gate Voltage
Set for Idq(avg) = 500 mA
3.0
10.0
dB
W
%
W
Volts
Dec 2008
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our
web site at www.microsemi..com or contact our factory direct.


  Microsemi Electronic Components Datasheet  

0150SC-1250M Datasheet

Silicon Carbide SIT

No Preview Available !

0150SC-1250M Rev B
0150SC-1250M
Typical RF Performance Curve
0150SC-1250M: Gain and Pout
300uS 10% , 125V
12
11
10
9
8
7
6
5
4
3
2
1
0
0
1800
1600
1400
1200
1000
800
600
400
200
0
50
100
150
200
250
Pin (W )
Gain
Pout
80.00%
70.00%
60.00%
50.00%
40.00%
30.00%
20.00%
10.00%
0.00%
0
0150SC-1250M: Pin vs Eff
300uS 10% , 125V
Drain Eff
50
100
150
200
250
Pin (W )
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our
web site at www.microsemi..com or contact our factory direct.


Part Number 0150SC-1250M
Description Silicon Carbide SIT
Maker Microsemi
PDF Download

0150SC-1250M Datasheet PDF






Similar Datasheet

1 0150SC-1250M Silicon Carbide SIT
Microsemi





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy