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0150SC-1250M - Silicon Carbide SIT

General Description

The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1250 Watts minimum of RF power from 150 to 160 MHz.

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0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1250 Watts minimum of RF power from 150 to 160 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as VHF Weather Radar and Long Range Tracking Radar. The device is the first in a series of High Power Silicon Carbide Transistors from Microsemi PPG.