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  Microsemi Electronic Components Datasheet  

0510GN-25-CP Datasheet

50MHz-1GHz Broadband GaN Amplifier

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0510GN-25-CP
25 Watts 50 Volts Pulsed & CW
50MHz-1GHz Broadband GaN Amplifier
Ceramic SMT Package
GENERAL DESCRIPTION
The 0510GN-25-CP is a COMMON SOURCE, class-AB, GaN on SiC
HEMT transistor amplifier for 50MHz-1GHz broadband pulsed and CW
RF power applications. The transistor is housed in a Ceramic SMT
package with high-thermal conductivity to provide superior electrical and
thermal performance with excellent reliability & ruggedness.
FEATURES:
Wide-band 50MHz-1GHz general purpose driver applications
Single lumped-element Broadband application circuit
Ideal for Pulsed Radar, Avionics, ISM, and CW Communication
Commercial & Military Applications
25 W Pulsed/CW Psat, 16 dB Power Gain and 50 % Drain Efficiency
Low-cost Ceramic SMT package with excellent RF & Thermal
performance, reliability & ruggedness
50V Bias Operation with high breakdown voltage
PACKAGE OUTLINE
Ceramic SMT 160X200 MIL
ABSOLUTE MAXIMUM RATINGS
Maximum CW Power Dissipation
Device Dissipation @ 25C
25 W
Maximum Voltage and Current
Drain-Source Voltage (VDSS)
Gate-Source Voltage (VGS)
Supply Current ( IDD )
125 V
-8 to +0 V
1400 mA
Maximum Temperatures
Storage Temperature (TSTG)
-55 to +150C
Operating Junction Temperature +200 C
TYPICAL CW BROADBAND PERFORMANCE SUMMARY 1 @ 25C
Parameter
Units 50 MHz 300 MHz 500 MHz 700 MHz 900 MHz 1 GHz
Output Power Psat
W
33
36
31
27
29
27
Power Gain
dB
16
16.5
16
15.5
15.7
15.5
D Drain Efficiency
%
85
75
61
50
52
52
1 Bias Condition: Vdd=+50V, Idq= 120 mA (Vgs= -2.0 ~ -4.5V typical), Pin = 29 dBm
RF performance measured on the recommended broadband evaluation circuit board.
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information


  Microsemi Electronic Components Datasheet  

0510GN-25-CP Datasheet

50MHz-1GHz Broadband GaN Amplifier

No Preview Available !

0510GN-25-CP
25 Watts 50 Volts Pulsed & CW
50MHz-1GHz Broadband GaN Amplifier
Ceramic SMT Package
DC FUNCTIONAL CHARACTERISTICS @ 25C
Symbol
Characteristics
Test Conditions
ID(Off)
IG(Off)
BVDSS
VGS(TH)
Drain leakage current
Gate leakage current
Drain-Source breakdown voltage
Gate Threshold Voltage
VGS = -8V, VDD = 50V
VGS = -8V, VDD = 0V
VGS =-8V, IDD = 4 mA
VDS =50V, IDD = 4 mA
Min Typ Max Units
2 mA
0.4 mA
125
V
-4.8 -3.4 -2.5 V
ELECTRICAL CHARACTERISTICS1 @ 25C
Symbol
Characteristics
Test Conditions1
Min Typ Max Units
Pout
Output Power
Pin=0.8W Freq= 50 MHz -1000 MHz, CW
28
W
Gp
Power Gain
Pin=0.8W Freq= 500 MHz, CW
16
dB
D
Pout
Drain Efficiency
Output Power
Pin=0.8W Freq= 500 MHz, CW
Pin=0.8W Freq= 1000 MHz, Pulsed 2
61
%
31
W
Gp
Power Gain
Pin=0.8W Freq= 1000 MHz, Pulsed 2
16
dB
D
Drain Efficiency
Dr
Droop
Pin=0.8W Freq= 1000 MHz, Pulsed 2
Pin=0.8W Freq= 1000 MHz, Pulsed 2
54
%
0.1
dB
VSWR-T Load Mismatch Tolerance
Pin=0.8W Freq=1000 MHz
5:1
Өjc
Thermal Resistance
Pulse Width=1 mS Duty=10%
including PCB, Tbase = 85 °C
1.7
CW
4.2
1 Bias Condition: Vdd=+50V, Idq= 120 mA (Vgs= -2.0 ~ -4.5V typical), CW
2 Bias Condition: Vdd=+50V, Idq= 80 mA (Vgs= -2.0 ~ -4.5V typical), PW = 1mS, DC = 10%
RF performance measured on the recommended broadband evaluation board.
°C/W
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information


Part Number 0510GN-25-CP
Description 50MHz-1GHz Broadband GaN Amplifier
Maker Microsemi
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