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1214GN-400LV - RF/Microwave Power Transistor

General Description

The 1214GN-400LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 400 Watts of pulsed RF output power at 4.5ms pulse width, 30% duty factor across the 1200 to 1400 MHz band.

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Full PDF Text Transcription for 1214GN-400LV (Reference)

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1214GN-400LV 400 Watts - 50 Volts, 4.5ms, 30% Broad Band 1200 - 1400 MHz GENERAL DESCRIPTION The 1214GN-400LV is an internally matched, COMMON SOURCE, class AB GaN on SiC...

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4GN-400LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 400 Watts of pulsed RF output power at 4.5ms pulse width, 30% duty factor across the 1200 to 1400 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is designed for L-Band Radar applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.

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