2N1489 Datasheet | Microsemi

TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/208 Devices 2N1487 2N1488 2N1489 2N1490 Qualified Level MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VCEX VEBO IB IC PT TJ, Tstg Symbol RθJC 2N1487 2N1498 40 60 60 10 3.0 6.0 75 2N1488 2N1490 55 100 100 Unit Vdc Vdc Vdc Vdc Adc Adc W @ TC = 250C (1) Operating & Storage Junction Temperature Range -65 to +200 Max. 2.33 TO-33- (TO-204AA) THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly @ 0.429 W/0C for TC > 250C Unit C/W - See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 m Adc Collector-Emitter Breakdown Voltage IC = 200 µAdc Collector-Emitter Breakdown Voltage IC = 0.5 m Adc, VEB = 1.5 Vdc Collector-Base Cutoff Current VCB = 30 Vdc Emitter-Base Cutoff Current VEB = 10 Vdc 2N1487, 2N1489 2N1488, 2N1490 2N1487, 2N1489 2N1488, 2N1490 2N1487, 2N1489 2N1488, 2N1490 V(BR)CEO 40 55 60 100 60 100 25 25 Vdc V(BR)CBO Vdc V(BR)CEX ICBO IEBO Vdc µAdc µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978)...