2N1490
TECHNICAL DATA
NPN SILICON HIGH POWER TRANSISTOR
Qualified per MIL-PRF-19500/208 Devices 2N1487 2N1488 2N1489 2N1490 Qualified Level
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation
Symbol
VCEO VCBO VCEX VEBO IB IC PT TJ, Tstg Symbol RθJC
2N1487 2N1498
40 60 60 10 3.0 6.0 75
2N1488 2N1490
55 100 100
Unit
Vdc Vdc Vdc Vdc Adc Adc W
@ TC = 250C (1)
Operating & Storage Junction Temperature Range
-65 to +200 Max. 2.33
TO-33- (TO-204AA)
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly @ 0.429 W/0C for TC > 250C
Unit C/W
- See Appendix A for Package Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 100 m Adc Collector-Emitter Breakdown Voltage IC = 200 µAdc Collector-Emitter Breakdown...
