2N3506L - NPN MEDIUM POWER SILICON TRANSISTOR

Microsemi (now Microchip Technology)

Datasheet Details

Part number	2N3506L
Manufacturer	Microsemi (now Microchip Technology)
File Size	86.79 KB
Description	NPN MEDIUM POWER SILICON TRANSISTOR
Datasheet	2N3506L Datasheet

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Other Datasheets by Microsemi (now Microchip Technology)

Part Number	Description
2N3506	NPN MEDIUM POWER SILICON TRANSISTOR
2N3506A	NPN MEDIUM POWER SILICON TRANSISTOR
2N3506AL	NPN MEDIUM POWER SILICON TRANSISTOR
2N3500	NPN SILICON SWITCHING TRANSISTOR
2N3500L	NPN SILICON SWITCHING TRANSISTOR
2N3501	NPN SILICON SWITCHING TRANSISTOR
2N3501L	NPN SILICON SWITCHING TRANSISTOR
2N3507	NPN MEDIUM POWER SILICON TRANSISTOR
2N3507A	NPN MEDIUM POWER SILICON TRANSISTOR
2N3507AL	NPN MEDIUM POWER SILICON TRANSISTOR

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6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com TECHNICAL DATA SHEET NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DEVICES 2N3506 2N3506A 2N3506L 2N3506AL 2N3507 2N3507A 2N3507L 2N3507AL ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 25°C (1) @ TC = 25°C (2) Operating & Storage Temperature Range Note: 1) Derate linearly 5.71 mW/°C for TA > +25°C 2) Derate linearly 55.5 mW/°C for TC > +25°C Symbol VCEO VCBO VEBO IC PT Top, Tstg 2N3506 2N3507 40 50 60 80 5.0 3.0 1.0 5.