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  Microsemi Electronic Components Datasheet  

2N3868S Datasheet

Silicon PNP Power Transistors

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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PNP SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/350
DEVICES
2N3867
2N3868
2N3867S
2N3868S
LEVELS
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +25°C (1)
Operating & Storage Junction Temperature Range
Symbol 2N3867 2N3868
VCBO
VCEO
VEBO
IC
PT
TJ, Tstg
40
60
40
60
4.0
3.0
1.0
-65 to +200
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Max.
Thermal Resistance, Junction-to-Ambient
RθJA
175
Note: * Electrical characteristics for “S” suffix devices are identical to the “non S”
corresponding devices.
1/ Derate linearly 5.71mW/°C for TA > +25°C
2/ Derate linearly 57.1mW/°C for TC > +25°C
Unit
Vdc
Vdc
Vdc
mAdc
W/°C
°C
Unit
°C/mW
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Current
IC = 10μAdc
2N3867, S
2N3868, S
Collector-Base Cutoff Current
VCB = 40Vdc
VCB = 60Vdc
Emitter-Base Cutoff Current
VEB = 4.0Vdc
Collector-Emitter Cutoff Current
VCE = 40Vdc
VCE = 60Vdc
VCE = 40Vdc, TA = +150°C
VCE = 60Vdc, TA = +150°C
2N3867, S
2N3868, S
2N3867, S
2N3868, S
2N3867, S
2N3868, S
Symbol Min.
V(BR)CEO
40
60
ICBO
IEBO
ICEX
Max. Unit
Vdc
100 µAdc
100 µAdc
1.0
1.0 µAdc
50
50
T4-LDS-0170 Rev. 1 (101121)
TO-5 *
2N3867, 2N3868
TO-39 * (TP-205AD)
2N3867S, 2N3868S
Page 1 of 4


  Microsemi Electronic Components Datasheet  

2N3868S Datasheet

Silicon PNP Power Transistors

No Preview Available !

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions
ON CHARACTERTICS (2)
Forward-Current Transfer Ratio
IC = 500mAdc, VCE = 1.0Vdc
IC = 1.5Adc, VCE = 2.0Vdc
IC = 2.5Adc, VCE = 3.0Vdc
IC = 3.0Adc, VCE = 5.0Vdc
2N3867, S
2N3868, S
2N3867, S
2N3868, S
2N3867, S
2N3868, S
2N3867, S
2N3868, S
Symbol
Min.
50
35
40
30
hFE
25
20
20
20
IC = 500mAdc, VCE = 1.0Vdc, TA = -55°C
Collector-Emitter Saturation Voltage
IC = 500mAdc, IB = 50mAdc
IC = 1.5Adc, IB = 150mAdc
IC = 2.5Adc, IB = 250mAdc
2N3867, S
2N3868, S
25
17
VCE(sat)
Base-Emitter Saturation Voltage
IC = 500mA, IB = 50mAdc
IC = 1.5A, IB = 150mAdc
IC = 2.5A, IB = 250mAdc
2N3867, S
2N3868, S
VBE(sat)
0.9
0.85
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short Circuit
Forward Current Transfer Ratio
IC = 100mAdc, VCE = 5.0Vdc, f = 20MHz
Output Capacitance
VCB = 10Vdc, IE = 0, 100 kHz f 1.0MHz
Iutput Capacitance
VEB = 3.0Vdc, IC = 0, 100 kHz f 1.0MHz
Symbol
|hfe|
Min.
3
Cobo
Cibo
(2) Pulse Test: Pulse Width = 300μs, Duty Cycle 2.0%
Max.
Unit
200
150
0.5
0.75
Vdc
1.5
1.0
1.4
Vdc
1.4
2.0
Max.
Unit
12
k
120
pF
800
pF
T4-LDS-0170 Rev. 1 (101121)
Page 2 of 4


Part Number 2N3868S
Description Silicon PNP Power Transistors
Maker Microsemi
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2N3868S Datasheet PDF






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