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  Microsemi Electronic Components Datasheet  

2N4261 Datasheet

PNP SMALL SIGNAL SILICON TRANSISTOR

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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PNP SMALL SIGNAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/511
DEVICES
2N4261
* Available for JANS only
2N4261UB
2N4261UBC *
LEVELS
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +25°C
Operating & Storage Junction Temperature Range
VCEO
VCBO
VEBO
IC
PT
Top, Tstg
Note: Consult 19500/511 for Thermal Performance Curves.
Value
15
15
4.5
30
0.2
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
°C
TO-72
2N4261
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc
Collector-Base Cutoff Current
VCB = 15Vdc
Emitter-Base Cutoff Current
VEB = 4.5Vdc
Collector-Emitter Cutoff Current
VCE = 10Vdc, VBE = 0.4Vdc
Collector-Emitter Cutoff Current
VCE = 10Vdc, VBE = 2.0Vdc
Symbol Min. Max. Unit
V(BR)CEO
15
ICBO
IEBO
ICEX1
ICEX2
Vdc
10 μAdc
10 μAdc
50 ηAdc
5 ηAdc
3 PIN
2N4261UB
2N4261UBC
(UBC = Ceramic Lid Version)
T4-LDS-0150 Rev. 2 (101161)
Page 1 of 5


  Microsemi Electronic Components Datasheet  

2N4261 Datasheet

PNP SMALL SIGNAL SILICON TRANSISTOR

No Preview Available !

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
ON CHARACTERISTICS (4)
Forward-Current Transfer Ratio
IC = 1.0mAdc, VCE = 1Vdc
IC = 10mAdc, VCE = 1Vdc
IC = 30mAdc, VCE = 1Vdc
Symbol
hFE
Collector-Emitter Saturation Voltage
IC = 1mAdc, IB = 0.1mAdc
IC = 10mAdc, IB = 1.0mAdc
Base-Emitter Saturation Voltage (Non-Saturated)
VCE = 1Vdc, IC = 1mAdc
VCE = 1Vdc, IC = 10mAdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Small–Signal Forward Current Transfer Ratio
IC = 10mAdc, VCE = 10Vdc, f = 100MHz
Output Capacitance
VCB = 4Vdc, IE = 0, 100kHz f 1.0MHz
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100kHz f 1.0MHz
VCE(sat)
VBE
Symbol
|hfe|
Cobo
Cibo
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
VCC = 17Vdc; IC = 10mAdc
Turn-Off Time
VCC = 17Vdc; IC = 10mAdc
(4) Pulse Test: Pulse Width = 300μs, Duty Cycle 2.0%.
Symbol
ton
toff
Min.
25
30
20
0.6
Min.
20
Min.
Max.
Unit
150
0.15 Vdc
0.35
0.80 Vdc
1.0
Max.
Unit
2.5 pF
2.5 pF
Max.
2.5
3.5
Unit
ηs
ηs
T4-LDS-0150 Rev. 2 (101161)
Page 2 of 5


Part Number 2N4261
Description PNP SMALL SIGNAL SILICON TRANSISTOR
Maker Microsemi
Total Page 5 Pages
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