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  Microsemi Electronic Components Datasheet  

A20M18LVR Datasheet

Power MOSFET

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APT20M18B2VR
A20M18LVR
200V 100A 0.018Ω
POWER MOS V® MOSFET
Power MOS V® is a new generation of high voltage N-Channel enhance-
ment mode power MOSFETs. This new technology minimizes the JFET ef-
fect, increases packing density and reduces the on-resistance. Power MOS
V® also achieves faster switching speeds through optimized gate layout.
B2VR
T-Max®
• TO-264 MAX Package
• Faster Switching   
• Lower Leakage
• Avalanche Energy Rated
TO-264
LVR
D
G
MAXIMUM RATINGS
Symbol Parameter
VDSS
ID
IDM
VGS
VGSM
PD
Drain-Source Voltage
Continuous Drain Current 6 @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
TJ,TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
S
All Ratings: TC = 25°C unless otherwise specified.
APT20M18B2VR_LVR UNIT
200
Volts
100
Amps
400
±30
Volts
±40
625
Watts
5.00
W/°C
-55 to 150
300
100
°C
Amps
50
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
200
Drain-Source On-State Resistance 2 (VGS = 15V, ID = 50 A)
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, T C = 125°C )
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
2
0.018
25
250
±100
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Volts
Ohms
µA
nA
Volts
Microsemi Website - http://www.microsemi.com


  Microsemi Electronic Components Datasheet  

A20M18LVR Datasheet

Power MOSFET

No Preview Available !

DYNAMIC CHARACTERISTICS
Symbol Characteristic
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 150V
ID = 100A @ 25°C
VGS = 15V
VDD = 150V
ID = 100A @ 25°C
RG = 0.6Ω
MIN
APT20M18B2VR_LVR
TYP MAX UNIT
9880
2320
pF
700
330
55
nC
145
18
27
ns
55
6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current 1 (Body Diode)
VSD
Diode Forward Voltage 2 (VGS = 0V, IS = -49A)
t rr
Reverse Recovery Time (IS = -49A, dlS/dt = 100A/µs)
360
Q rr Reverse Recovery Charge (IS = -49A, dlS/dt = 100A/µs)
6.7
dv/dt
Peak Diode Recovery dv/dt 5
MAX
100
400
1.3
5
UNIT
Amps
Volts
ns
µC
V/ns
THERMAL CHARACTERISTICS
Symbol Characteristic
RθJC
RθJA
Junction to Case
Junction to Ambient
MIN TYP
MAX
0.20
40
UNIT
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4
5
6
Sddvet/avdrittcinneugimtsTebj l=ef.r+s2ISr5e≤°flCe-c,IDtL1th0=e06Al0im0dµitiHa/dt,itoR≤nGs20=o0f2At5h/Ωµes,tePseVtaRck≤irIc2Lu0=i0t Vr1a0t0hTAeJr≤th1a5n0°tChe
The maximum current is limited by lead temperature.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.25
0.20
0.9
0.15
0.7
0.10
0.5
Note :
t1
0.3
t2
0.05
0.1
0.05
SINGLE PULSE
Duty Factor D = t1/t2
Peak T J = P DM x Z θJC + T C
0
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION


Part Number A20M18LVR
Description Power MOSFET
Maker Microsemi
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A20M18LVR Datasheet PDF






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