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  Microsemi Electronic Components Datasheet  

APT15GF120JCU2 Datasheet

NPT IGBT

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APT15GF120JCU2
ISOTOP® Boost chopper
NPT IGBT
SiC chopper diode
K
C
G
E
E
G
K
C
ISOTOP®
VCES = 1200V
IC = 15A @ Tc = 90°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Features
Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Low leakage current
- RBSOA and SCSOA rated
Chopper SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
ISOTOP® Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 90°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1200
30
15
60
±20
156
30A@1150V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
www.microsemi.com
1-6


  Microsemi Electronic Components Datasheet  

APT15GF120JCU2 Datasheet

NPT IGBT

No Preview Available !

APT15GF120JCU2
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES Zero Gate Voltage Collector Current
VCE(sat)
VGE(th)
IGES
Collector Emitter Saturation Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 1200V
Tj = 25°C
Tj = 125°C
250
500
µA
VGE =15V
IC = 15A
Tj = 25°C 2.5
Tj = 125°C
3.2
4.0
3.7
V
VGE = VCE, IC = 1mA
VGE = 20V, VCE = 0V
4
6V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Qg Total gate Charge
Qge Gate – Emitter Charge
Qgc Gate – Collector Charge
Td(on)
Tr
Turn-on Delay Time
Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Isc Short Circuit data
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
1000
150
70
pF
VGE = 15V
VBus = 600V
IC =15A
99
10 nC
70
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 15A
RG = 33Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 15A
RG = 33Ω
VGE = 15V
VBus = 600V
IC = 15A
RG = 33Ω
Tj = 125°C
Tj = 125°C
VGE 15V ; VBus = 900V
tp 10µs ; Tj = 125°C
60
50
315
30
60
50
356
40
1.2
1
90
ns
ns
mJ
A
Chopper SiC diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage
1200
V
IRM Maximum Reverse Leakage Current
VR=1200V
Tj = 25°C
Tj = 175°C
32
56
200
1000
µA
IF DC Forward Current
Tc = 125°C
10
A
VF Diode Forward Voltage
IF = 10A
Tj = 25°C
Tj = 175°C
1.6 1.8
2.3 3
V
QC Total Capacitive Charge
IF = 10A, VR = 600V
di/dt =500A/µs
40 nC
C Total Capacitance
f = 1MHz, VR = 200V
f = 1MHz, VR = 400V
96 pF
69
www.microsemi.com
2-6


Part Number APT15GF120JCU2
Description NPT IGBT
Maker Microsemi
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APT15GF120JCU2 Datasheet PDF






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