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  Microsemi Electronic Components Datasheet  

APT20M18B2VFR Datasheet

Power MOSFET

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APT20M18B2VFR
A20M18LVFR
200V 100A 0.018Ω
POWER MOS V® FREDFET
B2VFR
Power MOS V® is a new generation of high voltage N-Channel enhance-
ment mode power MOSFETs. This new technology minimizes the JFET ef-
fect, increases packing density and reduces the on-resistance. Power MOS
V® also achieves faster switching speeds through optimized gate layout.
T-Max®
TO-264
LVFR
T-MAX™ or TO-264 Package
• Avalanche Energy Rated
D
• Faster Switching
FAST RECOVERY BODY DIODE
• Lower Leakage
G
MAXIMUM RATINGS
Symbol Parameter
VDSS
ID
IDM
VGS
VGSM
PD
Drain-Source Voltage
Continuous Drain Current 6 @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
TJ,TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
S
All Ratings: TC = 25°C unless otherwise specified.
APT20M18B2VFR_LVFR UNIT
200
Volts
100
Amps
400
±30
Volts
±40
625
Watts
5.00
W/°C
-55 to 150
300
100
°C
Amps
50
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
200
Drain-Source On-State Resistance 2 (VGS = 15V, ID = 50 A)
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, T C = 125°C )
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MAX UNIT
Volts
0.018 Ohms
250
1000
±100
4
µA
nA
Volts
Microsemi Website - http://www.microsemi.com


  Microsemi Electronic Components Datasheet  

APT20M18B2VFR Datasheet

Power MOSFET

No Preview Available !

DYNAMIC CHARACTERISTICS
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 150V
ID = 100A @ 25°C
VGS = 15V
VDD = 150V
ID = 100A @ 25°C
RG = 0.6Ω
APT20M18B2VFR_LVFR
MIN TYP MAX UNIT
9880
2320
pF
700
330
55
nC
145
18
27
ns
55
6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP
IS
ISM
VSD
dv/dt
t rr
Q rr
IRRM
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -100A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -100A, di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -100A, di/dt ≤≤= 100A/µs)
Peak Recovery Current
(IS = -100A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
0.9
Tj = 125°C
3.4
Tj = 25°C
11
Tj = 125°C
20
MAX
100
400
1.3
8
230
450
UNIT
Amps
Volts
V/ns
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol Characteristic
RθJC
RθJA
Junction to Case
Junction to Ambient
MIN TYP
MAX
0.20
40
UNIT
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4
5
6
Sddvet/avdrittcinneugimtsTebj l=ef.r+s2ISr5e≤°flCe-c,IDtL1th0=e06Al0im0dµitiHa/dt,itoR≤nGs20=o0f2At5h/Ωµes,tePseVtaRck≤irIc2Lu0=i0t Vr1a0t0hTAeJr≤th1a5n0°tChe
The maximum current is limited by lead temperature.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.25
0.20
0.9
0.15
0.7
0.10
0.5
Note :
t1
0.3
0.05
t2
0.1
Duty Factor D = t1/t2
0.05
SINGLE PULSE
Peak T J = P DM x Z θJC + T C
0
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION


Part Number APT20M18B2VFR
Description Power MOSFET
Maker Microsemi
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APT20M18B2VFR Datasheet PDF






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