APT20M18B2VFR
A20M18LVFR
200V 100A 0.018Ω
POWER MOS V® FREDFET
B2VFR
Power MOS V® is a new generation of high voltage N-Channel enhance-
ment mode power MOSFETs. This new technology minimizes the JFET ef-
fect, increases packing density and reduces the on-resistance. Power MOS
V® also achieves faster switching speeds through optimized gate layout.
T-Max®
TO-264
LVFR
• T-MAX™ or TO-264 Package
• Avalanche Energy Rated
D
• Faster Switching
• FAST RECOVERY BODY DIODE
• Lower Leakage
G
MAXIMUM RATINGS
Symbol Parameter
VDSS
ID
IDM
VGS
VGSM
PD
Drain-Source Voltage
Continuous Drain Current 6 @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
TJ,TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
S
All Ratings: TC = 25°C unless otherwise specified.
APT20M18B2VFR_LVFR UNIT
200
Volts
100
Amps
400
±30
Volts
±40
625
Watts
5.00
W/°C
-55 to 150
300
100
°C
Amps
50
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
200
Drain-Source On-State Resistance 2 (VGS = 15V, ID = 50 A)
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, T C = 125°C )
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MAX UNIT
Volts
0.018 Ohms
250
1000
±100
4
µA
nA
Volts
Microsemi Website - http://www.microsemi.com
