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  Microsemi Electronic Components Datasheet  

APT30DQ120BCTG Datasheet

ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

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1200V 30A
APT30DQ120BCT
APT30DQ120BCTG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT APPLICATIONS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
-Inverters
• Snubber Diode
• PFC
PRODUCT FEATURES
• Ultrafast Recovery Times
PRODUCT BENEFITS
• Low Losses
• Soft Recovery Characteristics • Low Noise Switching
• Popular TO-247 Package
• Cooler Operation
• Low Forward Voltage
• Higher Reliability Systems
• Low Leakage Current
• Avalanche Energy Rated
• Increased System Power
Density
(BCT) TO-247
1
2
3
1
3
2
1 - Anode 1
2 - Common Cathode
Back of Case - Cathode
3 - Anode 2
MAXIMUM RATINGS
Symbol Characteristic / Test Conditions
All Ratings per leg: TC = 25°C unless otherwise specied.
APT30DQ120BCT(G) UNIT
VR
VRRM
VRWM
IF(AV)
IF(RMS)
IFSM
EAVL
TJ,TSTG
TL
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (TC = 103°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
Avalanche Energy (1A, 40mH)
Operating and StorageTemperature Range
Lead Temperature for 10 Sec.
1200
30
43
210
20
-55 to 175
300
Volts
Amps
mJ
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
VF
Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance, VR = 200V
IF = 30A
IF = 60A
IF = 30A, TJ = 125°C
VR = 1200V
VR = 1200V, TJ = 125°C
MIN TYP MAX UNIT
2.8
3.3
3.4
Volts
2.1
100
μA
500
36
pF
Microsemi Website - http://www.microsemi.com


  Microsemi Electronic Components Datasheet  

APT30DQ120BCTG Datasheet

ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

No Preview Available !

DYNAMIC CHARACTERISTICS
APT30DQ120BCT(G)
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
trr
Reverse Recovery Time IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
-
26
ns
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
320
IF = 30A, diF/dt = -200A/μs
-
545
nC
VR = 800V, TC = 25°C
-
4
-
Amps
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
IF = 30A, diF/dt = -200A/μs
VR = 800V, TC = 125°C
-
435
ns
-
2100
nC
-
9
-
Amps
trr
Reverse Recovery Time
-
180
ns
Qrr
Reverse Recovery Charge
IF = 30A, diF/dt = -1000A/μs
-
2975
nC
VR = 800V, TC = 125°C
IRRM Maximum Reverse Recovery Current
-
28
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
RθJC Junction-to-Case Thermal Resistance
WT Package Weight
MIN TYP
MAX
.80
0.22
5.9
UNIT
°C/W
oz
g
Torque Maximum Mounting Torque
10 lb•in
1.1 N•m
Microsemi reserves the right to change, without notice, the specications and information contained herein.
0.90
0.80
D = 0.9
0.70
0.60
0.7
0.50
0.5
0.40
Note :
0.30
0.3
0.20
0.10
0.1
0.05
0
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak T J = P DM x Z θJC + T C
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION



Part Number APT30DQ120BCTG
Description ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
Maker Microsemi
Total Page 3 Pages
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APT30DQ120BCTG Datasheet PDF





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