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  Microsemi Electronic Components Datasheet  

APT30N60SC6 Datasheet

MOSFET

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APT30N60BC6
APT30N60SC6
600V 30A .125Ω
COOLMOS
Power Semiconductors
• Ultra Low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• Extreme dv/dt Rated
Super Junction MOSFET
TO-247
D3PAK
D
G
S
MAXIMUM RATINGS
Symbol Parameter
All Ratings per die: TC = 25°C unless otherwise specied.
APT30N60B_SC6
UNIT
VDSS
ID
IDM
VGS
PD
TJ,TSTG
TL
dv/dt
IAR
EAR
EAS
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
Pulsed Drain Current 1
Total Power Dissipation @ TC = 25°C
Gate-Source Voltage Continuous
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (VDS = 480V, ID = 30A, TJ = 125°C)
Avalanche Current 2
Repetitive Avalanche Energy 2 ( Id = 5.2A, Vdd = 50V )
Single Pulse Avalanche Energy ( Id = 5.2A, Vdd = 50V )
600
30
19
89
±20
219
- 55 to 150
260
15
5.2
0.96
636
Volts
Amps
Volts
Watts
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX UNIT
BV(DSS)
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
Drain-Source On-State Resistance 3 (VGS = 10V, ID = 14.5A)
600
0.11 0.125
IDSS
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)
25
100
IGSS
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
±100
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 960μA)
2.5
3
3.5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Volts
Ohms
μA
nA
Volts
"COOLMOS™ comprise a new family of transistors developed by Inneon Technologies AG. "COOLMOS" is a trade-
mark of Inneon Technologies AG."
Microsemi Website - http://www.microsemi.com


  Microsemi Electronic Components Datasheet  

APT30N60SC6 Datasheet

MOSFET

No Preview Available !

DYNAMIC CHARACTERISTICS
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge 4
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller ") Charge
td(on) Turn-on Delay Time
tr
Rise Time
td(off) Turn-off Delay Time
tf
Fall Time
Eon Turn-on Switching Energy 5
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy 5
Eoff Turn-off Switching Energy
Test Conditions
MIN
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 300V
ID = 30A @ 25°C
INDUCTIVE SWITCHING
VGS = 15V
VDD = 400V
ID = 30A @ 25°C
RG = 4.3Ω
INDUCTIVE SWITCHING @ 25°C
VDD = 400V, VGS = 15V
ID = 30A, RG = 4.3Ω
INDUCTIVE SWITCHING @ 125°C
VDD = 400V, VGS = 15V
ID = 30A, RG = 4.3Ω
APT30N60B_SC6
TYP MAX UNIT
2267
1990
pF
203
88
12
nC
46
9
17
ns
74
48
409
224
649
μJ
282
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
IS
Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 3 (VGS = 0V, IS = -30A)
/dv
dt
Peak
Diode
Recovery
/dv
dt
6
t rr
Reverse Recovery Time
(IS
=
-30A,
/di
dt
=
100A/μs)
Q rr
Reverse Recovery Charge
(IS
=
-30A,
/di
dt
=
100A/μs)
IRRM
Peak Recovery Current
(IS
=
-30A,
/di
dt
=
100A/μs)
THERMAL CHARACTERISTICS
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
26
65
1.30
15
661
813
15
18
46
48
Symbol
Characteristic
MIN TYP MAX
RθJC
Junction to Case
0.52
RθJA
Junction to Ambient
31
1 Repetitive Rating: Pulse width limited by maximum junction temperature
4 See MIL-STD-750 Method 3471
2 Repetitive avalanche causes additional power losses that can be calculated as 5 Eon includes diode reverse recovery.
PAV = EAR*f . Pulse width tp limited by Tj max.
6 Maximum 125°C diode commutation speed = di/dt 600A/μs
3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
Microsemi reserves the right to change, without notice, the specications and information contained herein.
UNIT
Amps
Volts
V/ns
ns
μC
Amps
UNIT
°C/W
0.60
0.50
D = 0.9
0.40
0.7
0.30
0.20
0.10
0
10-5
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
0.1
1
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration


Part Number APT30N60SC6
Description MOSFET
Maker Microsemi
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