APT30N60BC6
APT30N60SC6
600V 30A .125Ω
COOLMOS
Power Semiconductors
• Ultra Low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• Extreme dv/dt Rated
Super Junction MOSFET
TO-247
D3PAK
D
G
S
MAXIMUM RATINGS
Symbol Parameter
All Ratings per die: TC = 25°C unless otherwise specified.
APT30N60B_SC6
UNIT
VDSS
ID
IDM
VGS
PD
TJ,TSTG
TL
dv/dt
IAR
EAR
EAS
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
Pulsed Drain Current 1
Total Power Dissipation @ TC = 25°C
Gate-Source Voltage Continuous
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (VDS = 480V, ID = 30A, TJ = 125°C)
Avalanche Current 2
Repetitive Avalanche Energy 2 ( Id = 5.2A, Vdd = 50V )
Single Pulse Avalanche Energy ( Id = 5.2A, Vdd = 50V )
600
30
19
89
±20
219
- 55 to 150
260
15
5.2
0.96
636
Volts
Amps
Volts
Watts
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX UNIT
BV(DSS)
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
Drain-Source On-State Resistance 3 (VGS = 10V, ID = 14.5A)
600
0.11 0.125
IDSS
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)
25
100
IGSS
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
±100
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 960μA)
2.5
3
3.5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Volts
Ohms
μA
nA
Volts
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG."
Microsemi Website - http://www.microsemi.com
