APT30SCD65B - Zero Recovery Silicon Carbide Schottky Diode

Microsemi (now Microchip Technology)

Key Features

Zero Recovery Time (trr).
Popular TO-247 Package.
Low Forward Voltage.
Low Leakage Current.

APT30SCD65B zero recovery silicon carbide schottky diode by Microsemi (now Microchip Technology) - Datasheet Preview

Datasheet Details

Part number	APT30SCD65B
Manufacturer	Microsemi (now Microchip Technology)
File Size	649.70 KB
Description	Zero Recovery Silicon Carbide Schottky Diode
Datasheet	APT30SCD65B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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APT30SCD65B 650V 30A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Power Factor Correction (PFC) PRODUCT FEATURES • Zero Recovery Time (trr) • Popular TO-247 Package • Low Forward Voltage • Low Leakage Current PRODUCT BENEFITS • Higher Reliability Systems • Minimizes or eliminates snubber 1 2 TO -2 4 7 D 3 PAK 1 2 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS Symbol VR VRRM VRWM IF IFRM IFSM PTOT TJ, TSTG TL TC = 25°C unless otherwise specified. Ratings Unit Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum D.C.