Full PDF Text Transcription for APT34N80B2C3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
APT34N80B2C3. For precise diagrams, and layout, please refer to the original PDF.
APT34N80B2C3 APT34N80LC3 800V 34A 0.145Ω Super Junction MOSFET C O OLMOS Power Semiconductors T-MAX™ TO-264 • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate ...
View more extracted text
TO-264 • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Popular T-MAX™ or TO-264 Package www.DataSheet4U.com Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. D G S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL dv/ dt All Ratings: TC = 25°C unless otherwise specified. APT34N80B2C3_LC3 UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 800
APT34N80B2C3 Datasheet
