APTM100A13DG Description
APTM100A13DG Phase leg with Series diodes MOSFET Power Module VDSS = 1000V RDSon = 130mΩ typ @ Tj = 25°C ID = 65A @ Tc = 25°C VBUS G1 S1 OUT G2 0/VBUS S2 G1 VBUS S1 S2 G2 0/VBUS OUT Application Zero Current Switching resonant.
APTM100A13DG Key Features
- Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
- Kelvin source for easy drive
- Very low stray inductance
- Symmetrical design