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APTM100A13DG
Phase leg with Series diodes MOSFET Power Module
VDSS = 1000V RDSon = 130mΩ typ @ Tj = 25°C ID = 65A @ Tc = 25°C
VBUS
G1 S1 OUT
G2 0/VBUS S2
G1 VBUS S1
S2 G2
0/VBUS
OUT
Application • Zero Current Switching resonant mode
Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration
Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant
APTM100A13DG – Rev 2 December, 2006
Absolute maximum ratings
Symbol
Para
APTM100A13DG Datasheet
