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APTM100A13SCG - MOSFET Power Module

Features

  • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged.
  • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF G1 VBUS S1 0/VBUS OUT.
  • Kelvin source for easy drive.
  • Very low stray inductance - Symmetrical design - M5 power connectors.
  • High level of integration S2 Benefits.

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Full PDF Text Transcription

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APTM100A13SCG Phase leg Series & SiC parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 130mΩ typ @ Tj = 25°C ID = 65A @ Tc = 25°C VBUS Q1 G1 OUT S1 Q2 G2 0/ VB US S2 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF G1 VBUS S1 0/VBUS OUT • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration S2 Benefits G2 • Outstanding performance at high frequency operation • Dir
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