APTM100H18FG Description
APTM100H18FG OUT1 OUT2 APTM100H18FG Rev 1 July, 2006 Full - Bridge MOSFET Power Module VDSS = 1000V RDSon = 180mΩ typ @ Tj = 25°C ID = 43A @ Tc = 25°C Q1 G1 S1 Q2 G2 S2 G1 VBUS S1 S3 G3 VB US Q3 Q4 0/VBUS O UT 1 0/VBUS O UT 2 Application Welding converters.
APTM100H18FG Key Features
- Power MOS 7® FREDFETs G4
- Low RDSon
- Low input and Miller capacitance
- Low gate charge S4
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
- Kelvin source for easy drive
- Very low stray inductance
- Symmetrical design