APTM100H35FTG Description
APTM100H35FTG Full - Bridge MOSFET Power Module VDSS = 1000V RDSon = 350mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C VBUS Q1 Q3 G1 S1 O UT1 O UT2 Q2 Q4 G3 S3 G2 S2 NT C1 0/V BU S G4 S4 NT C2 G3 S3 VBUS S1 G1 G4 S4 0/VBUS S2 G2 OUT2 OUT1 NTC2 NTC1 Application.
APTM100H35FTG Key Features
- Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
- Kelvin source for easy drive
- Very low stray inductance
- Symmetrical design