* Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
* SiC Parallel Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient
APTM100UM65SCAVG Datasheet (427.07 KB)
APTM100UM65SCAVG
427.07 KB
Single switch.
APTM100UM65SCAVG Single switch Series & SiC parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 65mΩ typ @ Tj = 25°C ID = 145A @ Tc = 25°C D D.
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