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  Microsemi Electronic Components Datasheet  

CD649 Datasheet

GENERAL PURPOSE SILICONE DIODE

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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
DEVICES
GENERAL PURPOSE
SILICONE DIODE
– ALL JUNCTIONS COMPLETELY PROTECTED WITH
SILICON DIOXIDE
– COMPATIBLE WITH ALL WIRE BONDING AND DIE
ATTACH TECHNIQUES EXCEPT SOLDER REFLOW
CD483B
CD485B
CD486B
CD645
CD647
CD649
CD5194
CD5195
CD5196
MAXIMUM RATING AT 25°C
Operating Temperature:
Storage Temperature:
-65°C to +175°C
-65°C to +175°C
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
TYPE
NUMBER
CD483B
CD485B
CD486B
CD645
CD647
CD649
CD5194
CD5195
CD5196
VRWM
VBR @ 50uA
VOLTS
80
200
250
270
480
720
80
200
250
MAXIMUM
FORWARD
VOLTAGE
VF @ 100mA
VOLTS
0.8 – 1.0
0.8 – 1.0
0.8 – 1.0
0.8 – 1.0(1)
0.8 – 1.0(1)
0.8 – 1.0(1)
0.8 – 1.0
0.8 – 1.0
0.8 – 1.0
IFSM
Tp = 1/120 S
TA = +25oC
A
2
2
2
5
5
5
2
2
2
MAXIMUM REVERSE
LEAKAGE CURRENT
@ +25oC
IR @ VR
nA VOLTS
25 70
25 180
25 225
50 225
50 400
50 600
25 80
25 200
25 225
MAXIMUM
CAPACITANCE @
VR = 4 VOLTS
f = 1.0MHz
CT
PICO FARADS
-
-
-
20
20
20
-
-
-
NOTE: (1) Performed at 400mA pulsed.
TYPE
NUMBER
IO
CD483B
CD485B
CD486B
CD645
CD647
CD649
CD5194
CD5195
CD5196
mA
200
200
200
400
400
400
200
200
200
IO
TA = + 150oC
mA
50
50
50
150
150
150
50
50
50
VF @ 400mA
TA = +150oC
V
-
-
-
0.7 – 0.95
0.7 – 0.95
0.7 – 0.95
-
-
-
MAXIMUM REVERSE
LEAKAGE CURRENT
@TA = +150oC
IR @ VR
uA nA
5 25
5 25
5 25
50 50
50 50
50 50
5 25
5 25
5 25
MAXIMUM FORWARD
VOLTAGE @ -55OC
VOLTS
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
VF @ IF
mA
100
100
100
400
400
400
100
100
100
27 MILS HEX,
FLAT To FLAT
LDS-0179 Rev. 1 (101264)
Page 1 of 2


  Microsemi Electronic Components Datasheet  

CD649 Datasheet

GENERAL PURPOSE SILICONE DIODE

No Preview Available !

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
DIE DIMENSIONS
DESIGN DATA
METALIZATION
Top: ( Cathode )….Au
Bottom: (Anode)..Al
AL Thickness...25,000A Min
Gold Thickness …4,000A Min
CHIP THICKNESS …10 Mils
Tolerances: All
Dimensions +/- 2 mils
.016
.027
LDS-0179 Rev. 1 (101264)
Page 2 of 2


Part Number CD649
Description GENERAL PURPOSE SILICONE DIODE
Maker Microsemi
Total Page 2 Pages
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