Download the GC4531 datasheet PDF.
This datasheet also covers the GC4510 variant, as both devices belong to the same high voltage nip diodes family and are provided as variant models within a single manufacturer datasheet.
General Description
The GC4500 series are high voltage, high power (anode base) NIP diodes.
These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems.
Key Features
Available as packaged devices or as chips for hybrid.
Full PDF Text Transcription for GC4531 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
GC4531. For precise diagrams, and layout, please refer to the original PDF.
www.MICROSEMI.com TM ® DESCRIPTION The GC4500 series are high voltage, high power (anode base) NIP diodes. These high resistivity silicon devices are passivated with sili...
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iodes. These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems. These devices can withstand storage temperatures from -65°C to +200°C and will operate over the range from -55° to +150°C. All devices meet or exceed military environmental specifications of MIL-PRF-19500. The NIP diode is used when negative bias current is available for forward conduction and will operate typically with -50 mA bias. Breakdown voltages are available up to 500 volts. (Higher voltages available on request. Consult f
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GC4531 Datasheet
