HUM2001 Datasheet | Microsemi

DESCRIPTION With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode is perfect for the high power switching applications where size and power handling capability are critical. Its advantages also include the low forward bias resistance and high zero bias impedance that are essential for low loss, high isolation and wide bandwidth performance. Hermetically sealed, SOGO passivated PIN chips with full-faced metallurgical bonds on both sides to achieve high reliability and high surge capability. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://.microsemi. KEY FEATURES High Power Stud Mount Package. High Zero Bias Impedance Very Low Inductance and Capacitance. No Internal Lead Straps. Small Mechanical Outline. APPLICATIONS/BENEFITS MRI Applications. High Power Antenna Switching. Style “D” Insulated Stud Style “C” Style “B” Stud Round Axial Leads Style “SM” Melf VOLTAGE RATING [25°C] Reverse Voltage (VR) - Volts IR = 10µA Part type 100V 500V HUM2005 1000V HUM2010 1500V HUM2015 Maximum Ratings @ 25ºC (UNLESS OTHERWISE SPECIFIED) Parameter Maximum Reverse Voltage Average Power Dissipation @ Stud =50°C Non-Repetitive Sinusoidal Surge Current (8.3 ms) Storage Temperature Range Operating Temperature Range Thermal resistance Junction-to Case “C” Stud only Symbol TRWM IO I TSTG TSTG RθJC HUM2001 100 -65 to +175 -55 to +150 2000V HUM2020 TYPE HUM2005 HUM2010 HUM2015 HUM2020...