LX5516 Datasheet InGaP HBT 2.4 - 2.5 GHz Power Amplifier Module

Manufacturer: Microsemi (now Microchip Technology)

LX5516 ingap hbt 2.4 - 2.5 ghz power amplifier module by Microsemi (now Microchip Technology) - Datasheet Preview

Datasheet Details

Part number	LX5516
Manufacturer	Microsemi (now Microchip Technology)
File Size	131.18 KB
Description	InGaP HBT 2.4 - 2.5 GHz Power Amplifier Module
Download	LX5516 Download (PDF)

General Description

The LX5516 is a power amplifier module optimized for WLAN applications in the 2.4-2.5GHz frequency range.

The PAM is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with on-chip active bias and 50 Ω impedance matched at both input and output.

The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD).

Overview

www.DataSheet4U.com TM ® LX5516 InGaP HBT 2.4 - 2.5 GHz Power Amplifier Module P RODUCTION D AT A S HEET W WW .

Microsemi .

Key Features

Advanced InGaP HBT 2.4-2.5GHz Operation Single-Polarity 3.3V Supply Quiescent Current ~80mA Power Gain ~ 29 dB Pout=~+18dBm for 2.5% EVM, OFDM 64QAM/54Mbps Total Current ~130mA for Pout= +18dBm 50Ω Input/Output Matching On-chip Output Power Detector Small Footprint: 2x2mm2 Ultra Low Profile:0.46mm.

More Datasheets from Microsemi (now Microchip Technology)

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LX5518	InGaP HBT 2.4 - 2.5 GHz Power Amplifier
LX5530LQ	High Power 4.5 to 6.0GHz Wireless LAN Power Amplifier