Description
and applications
Double Schottky configuration for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.The Metal silicon junction means the devices are majority carrier conduction leading to low power loss and high efficiency.Electrical characteristics(1)
MBR3040CT MBR3045CT MBR3050CT MBR3060CT MBR3080CT MBR3090CT MBR30100CT MBR30150CT MBR30200CT
Symbol
Parameter
Unit
VRRM
Max Peak Repetitive Reverse Voltage 40 45
VR(RMS)
Max RMS Reverse Vol.
Features
- Plastic package with UL 94V-0 flammability classification.
- Flame retardant epoxy molding component.
- Guardring for overvoltage protection.
- Low power loss, high efficiency.
- RoHS compliant (2002/95/EC)
2
12 3
1
3
TO-220AB
2.
