MG1001
MG1001 is GUNN Diodes manufactured by Microsemi.
® TM
Discrete Frequency: Cathode Heatsink
GUNN Diodes
Cathode Heat Sink
- MG1060
Features
- CW Designs to 500 mW
- Pulsed Designs to 10 W
- Frequency Coverage Specified from 5.9- 95 GHz
- Low Phase Noise
- High Reliability
Applications
- Motion Detectors
- Transmitters and Receivers
- Beacons
- Automotive Collision Avoidance Radars
- Radars
- Radiometers
- Instrumentation
Description
Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using proprietary techniques resulting in low phase and 1/f noise. Our Gunn diodes are available in a variety...