Datasheet Details
| Part number | MG1001 |
|---|---|
| Manufacturer | Microsemi |
| File Size | 205.73 KB |
| Description | GUNN Diodes |
| Datasheet |
 MG1001 Datasheet
|
|
|
| Part number | MG1001 |
|---|---|
| Manufacturer | Microsemi |
| File Size | 205.73 KB |
| Description | GUNN Diodes |
| Datasheet |
MG1001 Datasheet
|
|
|
|
Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. 95 GHz.
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