| Title | 다이오드 - RF 핀 - 단일 4V 800mA 50mW |
| Description | Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using proprietary techniques resulting in low phase and 1/f noise. Our Gunn diodes are available in a variety of microwave ceramic packages are available for operation from 5.9– 95 GHz. IMPORTANT: For the m... |
| Features |
● CW Designs to 500 mW ● Pulsed Designs to 10 W ● Frequency Coverage Specified from 5.9 –95 GHz ● Low Phase Noise ● High Reliability Applications ● Motion Detectors ● Transmitters and Receivers ● Beacons ● Automotive Collision Avoidance Radars ● Radars ● Radiometers ● Instrumentation Description Microsemi’s GaAs Gunn diodes, epi-down (cathode heats... |
| Datasheet |
 MG1021 Datasheet - 205.73KB |
| Distributor |
DigiKey |
| Stock | 0 In stock |
| Price |
No price available
|
| BuyNow |
 BuyNow - Manufacturer a Microchip Technology Inc MG1021-M16
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
DigiKey |
No price available |
BuyNow |
|
 Microchip Technology Inc |
1000 units: 333.84 USD 500 units: 340.52 USD 250 units: 353.86 USD 100 units: 370.57 USD 50 units: 393.94 USD 1 units: 410.61 USD |
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