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MG1060 Datasheet GUNN Diodes

Manufacturer: Microsemi (now Microchip Technology)

Download the MG1060 datasheet PDF. This datasheet also includes the MG1001 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MG1001-Microsemi.pdf) that lists specifications for multiple related part numbers.

General Description

Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process.

The layers are processed using proprietary techniques resulting in low phase and 1/f noise.

Our Gunn diodes are available in a variety of microwave ceramic packages are available for operation from 5.9– 95 GHz.

Overview

® TM Discrete Frequency: Cathode Heatsink GUNN Diodes Cathode Heat Sink MG1001 –.

Key Features

  • CW Designs to 500 mW.
  • Pulsed Designs to 10 W.
  • Frequency Coverage Specified from 5.9.
  • 95 GHz.
  • Low Phase Noise.
  • High Reliability.

More Datasheets from Microsemi (now Microchip Technology)

Part Number Description
MG1001 GUNN Diodes
MG1002 GUNN Diodes
MG1003 GUNN Diodes
MG1004 GUNN Diodes
MG1005 GUNN Diodes
MG1006 GUNN Diodes
MG1007 GUNN Diodes
MG1008 GUNN Diodes
MG1009 GUNN Diodes
MG1010 GUNN Diodes